page 1 of 7 4pt series rohs rohs sensitive gate scrs, 4a symbol i t ( rms ) 4 i tsm non repetitive surge peak on - state current ( full cycle , t initial = 25 c) j a 2 i t 2 i t value for fusing 4.5 2 a s di / dt critical rate of rise of on - state current 50 i gm peak gate current p g ( av ) average gate power dissipation t stg storage temperature range operating junction temperature range - 40 to + 150 - 40 to + 125 oc a / s a a w unit value 30 33 f =50 hz f =60 hz t = 20 ms t = 16.7 ms t = 10 ms p f = 60 hz t =125oc j t = 125oc j t = 125oc j t = 20 s p t j absolute maximum ratings parameter test conditions main features symbol value unit i t(rms) v /v drm rrm i gt 4 a v a 10 to 2 00 600 to 800 description thanks to highly sensitive triggering levels, the 4pt series is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, capacitive discharge ignitions, overvoltage crowbar protection for low power supplies among others. available in through-hole or surface-mount packages, v 600 and 800 t =125oc j v drm v rrm repetitive peak off-state voltage repetitive peak reverse voltage they provide an optimized performance in a limited space area. rms on - state current full sine wave (180 conduction angle ) 1.2 0.2 average on-state current (180 conduction angle) i t ( av ) 2.5 a a k a g to-220ab (non-lnsulated) to-251-4r (i-pak) to-252-4r (d-pak) i = 2xl , t 100 ns g gt r k a g to-220ab (lnsulated) (4ptxxf) (4ptxxg) (4ptxxa) (4ptxxai) www.nellsemi.com t =115c c t =110c c to-251-4r/to-252-4r/to-220ab to-220ab insulated to-251-4r/to-252-4r/to-220ab to-220ab insulated t =115c c t =110c c to-126 (non-lnsulated) (4ptxxam) t =95c c t =95c c to-126 k a g k a g to-202-3 to-126 to-202-3 t =60c c t =60c c to-202-3 (4ptxxat) 3(g) 1(k) 2(a) k a g a k a g a
4ptxxxx unit i gt v gd i h ma dv / dt v tm i drm ma i l v = 12v, r = 30 d l v = v , r = 3.3k , r = 220 , t = 125c d drm l gk j i = 50ma, r = 1k t gk i = 1ma, r = 1k g gk v = 67% v r = 1k, t = 125c d drm gk j , 0.8 0.1 5 6 10 a vv ma v/s i = 8a, t = 380 s t p t = 125c j t = 25c j t = 25c j v a electrical specifications test conditions symbol 1.6 5 1 v =v , v =v d drm r rrm r =1k gk min. max. max. min. max. max. min. max. max. max. 10 200 thermal resistance r th ( j - c ) junction to case ( dc ) r th ( j - a ) junction to ambient 2.8 60 c/w unit value symbol parameter ipak/dpak/to-220ab/to-126 to-252-4r(d-pak) to-220ab to-251-4r(i-pak)/to-126 70 100 2 s = 0.5 cm v gt product selector part number voltage ( x x ) sensitivity 70~200 a 4ptxxa-s/4ptxxal-s 4ptxxf-s 4ptxxg-s vv v 800 v v vv package to-220ab i-pak d-pak v v v v v v v v 4ptxxa-03/4ptxxal-03 v v v v v v v v v v v vv v v v 4ptxxa-05/4ptxxal-05 4ptxxf-03 4ptxxf-05 4ptxxf-06 4ptxxf-08 4ptxxg-03 4ptxxg-05 4ptxxg-06 4ptxxg-08 4ptxxa-06/4ptxxal-06 4ptxxa-08/4ptxxal-08 d-pak d-pak d-pak d-pak i-pak i-pak i-pak i-pak to-220ab to-220ab to-220ab to-220ab 10~30 a 20~ 5 0 a 30~60 a 50~80 a 10~30 a 20~ 5 0 a 30~60 a 50~80 a 10~30 a 20~ 5 0 a 30~60 a 50~80 a vv v vv v 4ptxxam-s 4ptxxam-03 4ptxxam-05 to-126 to-126 to-126 10~30 a 20~ 5 0 a 4ptxxam-06 4ptxxam-08 v v to-126 30~60 a v v to-126 50~80 a to-202-3 15 r th ( j - l ) junction to lead (dc) 4ptxxat-03 v v to-202-3 10~30 a 4ptxxat-06 v v to-202-3 30~60 a 4ptxxat-08 v v to-202-3 50~80 a page 2 of 7 www.nellsemi.com (t = 25 oc unless otherwise specified ) j i rrm 70~200 a 70~200 a 70~200 a 6 00 v 4pt series rohs rohs
ordering information scheme scr series package type current voltage code igt sensitivity a = to-220ab (non-insulated) ai = to-220ab ( insulated) 4 = 4 a, i t(rms) 03 = 10~30 a 4 pt 06 - s 06 = 600v f = to-251-4r (i-pak) g = to-252-4r (d-pak) 08 = 800v ordering information 4ptxxa-yy 4ptxxa-yy ordering type marking package weight , base q ty delivery mode to-220ab 2.0g 50 tube 4ptxxai-yy 4ptxxai-yy 2.3g 50 tube 4ptxxf-yy 4ptxxf-yy to-251-4r(i-pak) 0.40g 80 4ptxxg-yy 4ptxxg-yy 0.38g 80 tube to-252-4r(d-pak) to-220ab (insulated) tube 05 = 20~50 a06 = 30~60 a 08 = 50~80 a s = 70~200 a note : xx = voltage , yy = sensitivity 4ptxxam-yy 4ptxxam-yy 0.75g 500 bag to-126 am = to-126 4ptxxat-yy 4ptxxat-yy g to-202-3 at = to-202-3 page 3 of 7 www.nellsemi.com 500 bag 4pt series rohs rohs
i ,i ,i [t ] / i ,i ,i [t =25 c] gt h l j gt h l j 0 1 2 3 4 5 -40 -20 0 20 40 60 80 100 120 140 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 fig.5 relative variation of gate trigger current and holding current versus junction temperature fig.6 relative variation of holding current versus gate-cathode resistance (typical values) 1 e-2 1 e-1 1 e+0 1 e+1 i [r ] / i [r =1k?] h gk h gk fig.3 average and dc on-state current versus ambient temperature ( dpak) fig.4 relative variation of thermal impedance junction to ambient versus pulse duration (dpak) 2.0 1.81.6 1.4 1.2 1.0 0.8 0.6 0.4 0.20.0 0 25 50 75 100 125 1 e-3 1 e-2 1 e-1 1 e+0 1 e+1 1 e+2 5e+2 1 e-3 1 e-2 1 e-1 1 e+0 i (av)(a) t k=[z )/r ] th(j-c th(j-c) z th(j-a) z th(j-c) t (s) p device mounted on fr4 with recommended pad layout =180 dpak (s = 0.5 cm 2) dc ipak =180 t (c) amb dc device mounted on fr4 with recommended pad layout i gt t (c) j l il hand r =1k gk t =25 c j r (k) gk fig.1 maximum average power dissipation versus on - state current fig.2 average and dc on-state current versus case temperature p ( w ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.51.0 0 25 50 75 100 125 i (a) t(av) 0.5 0.0 360 =180 i (a) t(av) dc =180 to-220ab insulated t (c) case to-251 -4r /to-252 -4r to-220ab to-126 to-202-3 page 4 of 7 www.nellsemi.com 4pt series rohs rohs
0 20 40 60 80 100 0.10 0.5 1.0 1.5 2.0 3.0 2.5 3.5 4.0 0.0 1.0 10.0 50.0 0 2 4 6 i (a) tm r (j-a)( c/w) th fig.11 on-state characteristics (maximum values) fig.12 thermal resistance junction to ambient versus copper surface under tab (dpak) 8 10 12 14 16 18 20 0 5 10 1 10 100 1000 15 20 25 30 35 fig.9 surge peak on-state current versus number of ctcles i (a) tsm 0.01 0.10 1.00 10.00 1 10 100 300 i (a),i2t(a2s) tsm fig.10 non-repetitive surge peak on-state current, and corresponding values of l2t non repetitive t inital=25c j repetitive t =115c c number of cycles t =10ms p one cycle di/dt iimitation tj inital=25 c i tsm i2t sinusoidal pulse with width < 10ms t (ms) p v (v) tm s(cm2) epoxy printed circuit board fr4 copper thickness = 35m 0.01 0.10 10.00 2 6 8 200 600 1000 0 400 800 0 0 4 2 4 6 1400 1800 1200 1600 2000 1.00 dv/dt[r ] / dv/dt[r =220?] gk gk 22 8 10 12 14 16 18 20 10 fig.7 relative variation of dv/dt immunity versus gate-cathode resistance (typical values) fig.8 relative variation of dv/dt immunity versus gate-cathode capacitance (typical values) dv/dt[c ] / dv/dt[r =220?] gk gk t =125 c j v =0.67 x v d drm r (k?) gk t =125 c j v =0.67 x v d drm r =220 gk c (nf) gk t = 25c j t =max j t max j t =0.85v t0 r =90m d page 5 of 7 www.nellsemi.com 4pt series rohs rohs
case style to-252-4r (d-pak) to-251-4r (i-pak) 2.87 (0.113) 2.62 (0.103) 9.40 (0.370)9.14 (0.360) 10.54 (0.415) max . 16.13 (0.635)15.87 (0.625) pin 4.06 (0.160)3.56 (0.140) 1.45 (0.057)1.14 (0.045) 2.67 (0.105)2.41 (0.095) 2.65 (0.104)2.45 (0.096) 5.20 (0.205)4.95 (0.195) 0.90 (0.035)0.70 (0.028) 3.91 (0.154)3.74 (0.148) k ga 4.70 (0.185)4.44 (0.1754) 1.39 (0.055)1.14 (0.045) 3.68 (0.145)3.43 (0.135) 8.89 (0.350)8.38 (0.330) 29.16 (1.148)28.40 (1.118) 14.22 (0.560)13.46 (0.530) 0.56 (0.022)0.36 (0.014) 2.79 (0.110) 2.54 (0.100) 15.32 (0.603)14.55 (0.573) to-220ab page 6 of 7 www.nellsemi.com 3(g) 1(k) 2(a) 4pt series rohs rohs k ga a k ga a
7.5 2.5 3.8 3.1 10.8 2.54 15.9 1 2 3 0.5 2.29 0.76 1.2 4.58 to-126 to-202-3 case style 1.50 0.50 10.5 min 1.4 max. 4.50 1.50 7.30 10.1 max. ? 0.70 max. 2.54 2.54 page 7 of 7 www.nellsemi.com 3(g) 1(k) 2(a) a k g 4pt series rohs rohs
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